sot-23 plastic-encap s ulate transistors m8050 transistor (npn) features power dissipation marking: y11 maximum ratings (t a =25 unless otherwise noted) symbol para m eter value u nits v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 6 v i c collector current -continuous 0.8 a p c collector power dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax unit collector-base breakdown voltage v (br) cbo i c =100 a, i e =0 4 0 v collector-emitter breakdown voltage v (br) ceo * i c =1ma , i b =0 25 v emitter-base breakdown voltage v (br) ebo i e =100 a, i c =0 6 v collector cut-off current i cbo v cb = 35v, i e =0 0.1 a collector cut-off c urrent i ceo v ce = 20v, i b =0 0.1 a h fe(1) v ce =1v, i c =5ma 45 h fe(2) v ce =1v, i c =100ma 80 4 00 dc current gain h fe ( 3) v ce =1v, i c =800ma 40 collector-emitter saturation voltage v ce(sat) i c = 800ma, i b =80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b = 80ma 1.2 v transition frequency f t v ce =6v, i c = 20ma , f=30mhz 150 mhz * pulse test : pulse width 300s , duty cycle 2%. classification of h fe (2) rank l h range 80- 3 00 3 00- 4 00 sot-23 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0 25 50 75 100 125 150 0 50 100 150 200 250 0.1 1 10 1 10 100 11 0 10 100 1000 1 10 100 1000 10 100 1000 012345 0 100 200 300 400 0.1 1 10 100 1000 200 400 600 800 1000 1200 1 10 100 1000 1 10 100 1000 ambient temperature t a ( ) collector power dissipation p c (mw) p c ?? t a 20 m8050 c ob c ib f=1mhz i e =0 / i c =0 t a =25 v cb / v eb c ob / c ib ?? capacitance c (pf) reverse bias voltage v (v) transition frequency f t (mhz) collector current i c (ma) v ce =6v t a =25 i c f t ?? 40 i c h fe ?? dc current gain h fe collector current i c (ma) t a =25 t a =100 common emitter v ce =1v 640ua 800ua 720ua 560ua 480ua 400ua 320ua 240ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 160ua i b =80ua common emitter t a =25 collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =25 t a =100 =10 i c v besat ?? =10 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) t a =100 t a 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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